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| e PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 10 Output Power (Watts) 8 6 4 201 76 LOT COD E VCC = 26 V 2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ICQ = 30 mA f = 1850 MHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Thermal Resistance (Tflange = 70C) Symbol VCEO VCES VEBO IC PD Tstg RJC Value 20 45 4.0 1 21 0.12 150 8.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20176 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to B Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA, RBE = 22 IB = 0 A, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 200 mA VCB = 26 V, IE = 0 A, f = 1 MHz Symbol V(BR)CER V(BR)CBO V(BR)EBO hFE Cob Min 45 45 4 20 -- Typ -- -- -- -- 7 Max -- -- -- 100 -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 30 mA, f = 1.85 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 5 W(PEP), ICQ = 30 mA, f1 = 1.8800 GHz, f2 = 1.8801 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C IMD Min 11 6.3 38 -30 Typ 12 7.9 42 -35 Max -- -- -- -- Units dB Watts % dBc -- -- 10:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA) Z Source Z Load Frequency GHz 1.800 1.850 1.900 R 7.8 7.6 7.5 Z Source jX -7.0 -6.4 -5.8 R 6.7 6.7 6.7 Z Load jX 1.5 2.3 3.1 2 6/24/97 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 15 -30 14 -27 PTB 20176 Intermodulation Distortion vs. Power Output VCC = 26 V ICQ = 30 mA f1 = 1880.0 MHz -33 -36 -39 -42 IMD (dBc) Gain (dB) 13 12 11 10 1775 f2 = 1880.1 MHz VCC = 26 V ICQ = 30 mA Pout = 5 W 1800 1825 1850 1875 1900 1925 2 3 4 5 6 7 Frequency (MHz) Output Power (Watts-PEP) Efficiency vs. Output Power 60 50 Efficiency (%) 40 30 VCC = 26 V 20 10 0 2 4 6 8 10 ICQ = 30 mA f = 1850 MHz Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20176 Uen Rev. C 09-28-98 3 6/24/97 |
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